Influence of the alloy composition on the thermodynamic parameters of nucleation and growth of SiGe

被引：0

作者：

Olivares, J ^{[1
]}

Rodríguez, A ^{[1
]}

Sangrador, J ^{[1
]}

Rodríguez, T ^{[1
]}

Martín, P ^{[1
]}

Jiménez, J ^{[1
]}

Ballesteros, C ^{[1
]}

Castro, M ^{[1
]}

机构：

[1] Univ Politecn Madrid, ETSI Telecomunicac, Dpto Tecnol Elect, E-28040 Madrid, Spain

来源：

NUCLEATION AND GROWTH PROCESSES IN MATERIALS | 2000年 / 580卷

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The influence of the germanium fraction on the parameters of the solid phase crystallization of amorphous silicon-germanium has been studied. Layers of different compositions were deposited by LPCVD at 450 degreesC and crystallized at 525, 550, 575 and 600 degreesC. The crystalline fraction was determined as a function of the annealing time for each germanium fraction and temperature. The incubation and the characteristic crystallization times were obtained by fitting the crystalline fraction to Avrami's model. The values of the diffusion activation energy were obtained for different compositions. The dependence of the nucleation rate and the growth velocity on the germanium fraction and the temperature was studied. The three parameters decrease as the Ge fraction increases; though the stronger dependence corresponds to the nucleation rate. The dependences on the composition and the temperature were analyzed in the frame of a conventional nucleation and growth model and their relationship with the corresponding free energies was discussed.

引用

页码：147 / 152

页数：6

共 9 条

[1] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J].

CSEPREGI, L ;

KENNEDY, EF ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3906-3911

[2]

DONOVAN EP, 1984, MATER RES S P, V27, P211

[3] CRYSTALLIZATION OF AMORPHOUS GEXSI1-X FILMS ON SIO2 [J].

EDELMAN, F ;

KOMEM, Y ;

IYER, SS ;

HEYDENREICH, J ;

BAITHER, D .

THIN SOLID FILMS, 1992, 222 (1-2) :57-59

[4] CRYSTALLIZATION OF AMORPHOUS HYDROGENATED SI1-XGEX FILMS [J].

EDELMAN, F ;

WEIL, R ;

WERNER, P ;

REICHE, M ;

BEYER, W .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1995, 150 (01) :407-425

[5] RECRYSTALLIZATION OF AMORPHIZED POLYCRYSTALLINE SILICON FILMS ON SIO2 - TEMPERATURE-DEPENDENCE OF THE CRYSTALLIZATION PARAMETERS [J].

IVERSON, RB ;

REIF, R .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (05) :1675-1681

[6] SOLID-PHASE CRYSTALLIZATION OF THIN-FILMS OF SI PREPARED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION [J].

MASAKI, Y ;

LECOMBER, PG ;

FITZGERALD, AG .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (01) :129-134

[7] Solid-phase crystallization of amorphous SiGe films deposited by LPCVD on SiO2 and glass [J].

Olivares, J ;

Rodríguez, A ;

Sangrador, J ;

Rodríguez, T ;

Ballesteros, C ;

Kling, A .

THIN SOLID FILMS, 1999, 337 (1-2) :51-54

[8] Amorphous SiGe deposition by LPCVD from Si2H6 and GeH4 precursors [J].

Olivares, J ;

Sangrador, J ;

Rodríguez, A ;

Rodríguez, T .

JOURNAL DE PHYSIQUE IV, 1999, 9 (P8) :321-325

[9] POLYCRYSTALLINE SILICON THIN-FILMS PROCESSED WITH SILICON ION-IMPLANTATION AND SUBSEQUENT SOLID-PHASE CRYSTALLIZATION - THEORY, EXPERIMENTS, AND THIN-FILM-TRANSISTOR APPLICATIONS [J].

YAMAUCHI, N ;

REIF, R .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (07) :3235-3257

← 1 →