Energy Gap Calculations for ZnSxSe1-x

被引：0

作者：

Al-Shabeeb, Ghassan H. E. ^{[1
]}

Arof, A. K. ^{[1
]}

机构：

[1] Univ Malaya, Ctr Ion, Dept Phys, Kuala Lumpur 50603, Malaysia

来源：

PROGRESS OF PHYSICS RESEARCH IN MALAYSIA, PERFIK2009 | 2010年 / 1250卷

关键词：

Electron transport in compound semiconductor; Semiconducting II-VI compounds; ELECTRON-BEAM EVAPORATION; THIN-FILMS; EPITAXIAL LAYERS; BAND-GAP; GAAS; GROWTH; ZNS;

D O I：

10.1063/1.3469743

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work we have uesd Kane's model to evaluate the band gap for semiconductor alloys ZnS(x)Se(1-x) where it as Eg=Eg(c)+Delta Eg, where Eg(c) is the band gap of the stress-free alloy, and Delta Eg is the shift caused by grain size effect. Using the relationship mu*/m(e)=0.3375ln0.56226Eg(c) expression for Eg is derived. Our results show that the equation obtained is in good agreement with published results.

引用

页码：97 / 100

页数：4

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