Single-electron transistor based on modulation-doped SiGe heterostructures

被引：21
作者：
Notargiacomo, A
Di Gaspare, L
Scappucci, G
Mariottini, G
Evangelisti, F
Giovine, E
Leoni, R
机构：
[1] Univ Roma Tre, Dipartimento Fis E Amaldi, I-00146 Rome, Italy
[2] Univ Roma Tre, Unita INFM, I-00146 Rome, Italy
[3] CNR, IFN, I-00156 Rome, Italy
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 02期
关键词：
D O I：
10.1063/1.1592883
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the characterization of a single-electron transistor based on bended wires fabricated on modulation-doped SiGe two-dimensional electron gas. Electrical measurements show a diamond-shaped stability plot and a nonperiodic sequence of conductance peaks. The device behavior suggests the presence of disorder-induced multiple islands along the wire. Conductance oscillations remain well pronounced above liquid helium temperature. (C) 2003 American Institute of Physics.
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页码：302 / 304
页数：3
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