Tl-2212 and Tl-1212 c oriented thin films were prepared by the thalliation of (Ba1-xSrx)(2)Ca2Cu3(O/F)(z) precursor layers, which were deposited on single-crystal CeO2-buffered sapphire substrate by sequential thermal evaporation of BaF2, SrF2, CaF2 and Cu components. The partial defluorination of the precursor did not significantly influence the phase composition and the superconducting properties of the obtained Tl-2212 films. The prepared Tl-2212 layers exhibit T-C(0) 98 K for a sample without Sr and falls to T-C(0) = 78 K for a partially Sr substituted films (x = 0.4). The increasing Sr content in the precursor stabilises the Tl-1212 phase. The samples prepared from defluorinated precursors show T-C(0) values in the range 47-55 K depending on the Sr content. On the other hand the Tl-1212 films synthesized from fluorinated precursors show greater transition widths to the superconducting state and therefore their T-C(0) values are shifted to 38-41 K. This is caused probably by the increased amount of amorphous non-superconducting admixtures, which can be seen by SEM in form of precipitates on the film.
机构:
Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi, MD 20783Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi, MD 20783
Potrepka, D.M.
Hirsch, S.
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Weapons and Materials Research Directorate, Active Materials Research Group, U.S. Army Research Laboratory, Aberdeen Proving Ground, MD 21005Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi, MD 20783
Hirsch, S.
Cole, M.W.
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Weapons and Materials Research Directorate, Active Materials Research Group, U.S. Army Research Laboratory, Aberdeen Proving Ground, MD 21005Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi, MD 20783
Cole, M.W.
Nothwang, W.D.
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Weapons and Materials Research Directorate, Active Materials Research Group, U.S. Army Research Laboratory, Aberdeen Proving Ground, MD 21005Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi, MD 20783
Nothwang, W.D.
Zhong, S.
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Department of Materials Science and Engineering, Institute of Materials Science, University of Connecticut, Storrs, CT 06269Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi, MD 20783
Zhong, S.
Alpay, S.P.
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Department of Materials Science and Engineering, Institute of Materials Science, University of Connecticut, Storrs, CT 06269Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi, MD 20783
机构:
E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R ChinaE China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
Dong, Yuchen
He, Jun
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E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R ChinaE China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
He, Jun
Sun, Lin
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E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R ChinaE China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
Sun, Lin
Chen, Ye
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E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R ChinaE China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
Chen, Ye
Yang, Pingxiong
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E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R ChinaE China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
Yang, Pingxiong
Chu, Junhao
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E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R ChinaE China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
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UNESP, Inst Quim, Ctr Multidisciplinary Para Desenvolvimento Mat, BR-14801970 Sao Paulo, CEP, BrazilUNESP, Inst Quim, Ctr Multidisciplinary Para Desenvolvimento Mat, BR-14801970 Sao Paulo, CEP, Brazil
González, AHM
Simoes, AZ
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UNESP, Inst Quim, Ctr Multidisciplinary Para Desenvolvimento Mat, BR-14801970 Sao Paulo, CEP, BrazilUNESP, Inst Quim, Ctr Multidisciplinary Para Desenvolvimento Mat, BR-14801970 Sao Paulo, CEP, Brazil
Simoes, AZ
Zaghete, MA
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UNESP, Inst Quim, Ctr Multidisciplinary Para Desenvolvimento Mat, BR-14801970 Sao Paulo, CEP, BrazilUNESP, Inst Quim, Ctr Multidisciplinary Para Desenvolvimento Mat, BR-14801970 Sao Paulo, CEP, Brazil
Zaghete, MA
Varela, JA
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UNESP, Inst Quim, Ctr Multidisciplinary Para Desenvolvimento Mat, BR-14801970 Sao Paulo, CEP, BrazilUNESP, Inst Quim, Ctr Multidisciplinary Para Desenvolvimento Mat, BR-14801970 Sao Paulo, CEP, Brazil
机构:
Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi, MD 20783Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi, MD 20783
Potrepka, D.M.
Hirsch, S.
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h-index: 0
机构:
Weapons and Materials Research Directorate, Active Materials Research Group, U.S. Army Research Laboratory, Aberdeen Proving Ground, MD 21005Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi, MD 20783
Hirsch, S.
Cole, M.W.
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机构:
Weapons and Materials Research Directorate, Active Materials Research Group, U.S. Army Research Laboratory, Aberdeen Proving Ground, MD 21005Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi, MD 20783
Cole, M.W.
Nothwang, W.D.
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机构:
Weapons and Materials Research Directorate, Active Materials Research Group, U.S. Army Research Laboratory, Aberdeen Proving Ground, MD 21005Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi, MD 20783
Nothwang, W.D.
Zhong, S.
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h-index: 0
机构:
Department of Materials Science and Engineering, Institute of Materials Science, University of Connecticut, Storrs, CT 06269Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi, MD 20783
Zhong, S.
Alpay, S.P.
论文数: 0引用数: 0
h-index: 0
机构:
Department of Materials Science and Engineering, Institute of Materials Science, University of Connecticut, Storrs, CT 06269Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi, MD 20783
机构:
E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R ChinaE China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
Dong, Yuchen
He, Jun
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E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R ChinaE China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
He, Jun
Sun, Lin
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E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R ChinaE China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
Sun, Lin
Chen, Ye
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E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R ChinaE China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
Chen, Ye
Yang, Pingxiong
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E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R ChinaE China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
Yang, Pingxiong
Chu, Junhao
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E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R ChinaE China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
机构:
UNESP, Inst Quim, Ctr Multidisciplinary Para Desenvolvimento Mat, BR-14801970 Sao Paulo, CEP, BrazilUNESP, Inst Quim, Ctr Multidisciplinary Para Desenvolvimento Mat, BR-14801970 Sao Paulo, CEP, Brazil
González, AHM
Simoes, AZ
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UNESP, Inst Quim, Ctr Multidisciplinary Para Desenvolvimento Mat, BR-14801970 Sao Paulo, CEP, BrazilUNESP, Inst Quim, Ctr Multidisciplinary Para Desenvolvimento Mat, BR-14801970 Sao Paulo, CEP, Brazil
Simoes, AZ
Zaghete, MA
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UNESP, Inst Quim, Ctr Multidisciplinary Para Desenvolvimento Mat, BR-14801970 Sao Paulo, CEP, BrazilUNESP, Inst Quim, Ctr Multidisciplinary Para Desenvolvimento Mat, BR-14801970 Sao Paulo, CEP, Brazil
Zaghete, MA
Varela, JA
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UNESP, Inst Quim, Ctr Multidisciplinary Para Desenvolvimento Mat, BR-14801970 Sao Paulo, CEP, BrazilUNESP, Inst Quim, Ctr Multidisciplinary Para Desenvolvimento Mat, BR-14801970 Sao Paulo, CEP, Brazil