The structure and growth mechanism of Si nanoneedles prepared by plasma-enhanced chemical vapor deposition

被引：17
|
作者：
Cervenka, J. [1 ]
Ledinsky, M. [1 ]
Stuchlik, J. [1 ]
Stuchlikova, H. [1 ]
Bakardjieva, S. [2 ]
Hruska, K. [1 ]
Fejfar, A. [1 ]
Kocka, J. [1 ]
机构：
[1] Acad Sci Czech Republic, Inst Phys, VVI, Prague 16200 6, Czech Republic
[2] Acad Sci Czech Republic, Inst Inorgan Chem, VVI, CZ-25068 Rez, Czech Republic
来源：
NANOTECHNOLOGY | 2010年 / 21卷 / 41期
关键词：
SILICON NANOWIRES; SOLAR-CELLS; ARRAYS; SPECTROMETRY; TIPS;
D O I：
10.1088/0957-4484/21/41/415604
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Silicon nanowires and nanoneedles show promise for many device applications in nanoelectronics and nanophotonics, but the remaining challenge is to grow them at low temperatures on low-cost materials. Here we present plasma-enhanced chemical vapor deposition of crystalline/amorphous Si nanoneedles on glass at temperatures as low as 250 degrees C. High resolution electron microscopy and micro-Raman spectroscopy have been used to study the crystal structure and the growth mechanism of individual Si nanoneedles. The H(2) dilution of the SiH(4) plasma working gas has caused the formation of extremely sharp nanoneedle tips that in some cases do not contain a catalytic particle at the end.
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页数：7
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