Fe implantation induced lattice defects and their recovery in GaN

被引：0

作者：

Bharuth-Ram, K. ^{[1
,2
]}

Naidoo, D. ^{[3
]}

Adoons, V ^{[2
]}

Ronning, C. ^{[2
,4
]}

机构：

[1] Univ KwaZulu Natal, Sch Chem & Phys, ZA-4000 Durban, South Africa

[2] Durban Univ Technol, Phys Dept, ZA-4001 Durban, South Africa

[3] Univ Witwatersrand, Sch Phys, ZA-2050 Johannesburg, South Africa

[4] Friedrich Schiller Univ Jena, Inst Solid State Phys, D-07743 Jena, Germany

来源：

HYPERFINE INTERACTIONS | 2022年 / 243卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

GaN; Fe-56; Fe-57; implantation; CEMS; defect annealing; ION-IMPLANTATION; SITES;

D O I：

10.1007/s10751-021-01785-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

A GaN thin film grown on sapphire substrate was implanted with Fe-57 and Fe-56 ions with energies of 60 keV, 160 keV and 370 keV and fluences selected to achieve a homogeneous concentration profile of approximately 2.6 at. % in the film. Implantation induced lattice damage was tracked with conversion electron Mossbauer spectroscopy (CEMS) after annealing the sample up to 900 degrees C. The spectral component due to Fe in lattice damage shows significant decrease on annealing above 700 degrees C, accompanied by a corresponding increase in the paramagnetic doublet component attributed to Fe substituting Ga in the wurtzite GaN lattice (Fe-Ga). After annealing at 900 degrees C, Fe-Ga accounts for 75% of the spectral area, in good agreement with the substitutional Fe-Ga fraction (80%) observed in emission channeling measurements on Fe implanted into GaN at extremely dilute concentration.

引用

页数：7