GaTe-Sb2Te3 thin-films phase change characteristics

被引：8

作者：

Bouska, Marek ^{[1
]}

Nazabal, Virginie ^{[1
,2
]}

Gutwirth, Jan ^{[1
]}

Halenkovic, Tomas ^{[1
]}

Prikryl, Jan ^{[1
,3
]}

Normani, Simone ^{[1
]}

Nemec, Petr ^{[1
]}

机构：

[1] Univ Pardubice, Fac Chem Technol, Dept Graph Arts & Photophys, Studentska 573, Pardubice 53210, Czech Republic

[2] Univ Rennes 1, UMR CNRS 6226, Inst Sci Chim Rennes, Campus Beaulieu, F-35042 Rennes, France

[3] Univ Pardubice, Fac Chem Technol, Ctr Mat & Nanotechnol, Nam Cs Legii 565, Pardubice 53002, Czech Republic

来源：

OPTICS LETTERS | 2020年 / 45卷 / 05期

关键词：

CRYSTALLIZATION; TE; SE; GE;

D O I：

10.1364/OL.386779

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A radio frequency magnetron co-sputtering technique exploiting GaTe and Sb2Te3 targets was used for the fabrication of Ga-Sb-Te thin films. Prepared layers cover broad region of chemical composition (similar to 10.0-26.3 at. % of Ga, similar to 19.9-34.4 at. % of Sb) while keeping Te content fairly constant (53.8-55.6 at. % of Te). Upon crystallization induced by annealing, large variations in electrical contrast were found, reaching a sheet resistance ratio of Rannaded/Ras-deposited similar to 2.2 x 10(-8) for the Ga26.3Sb19.9Te33.8 layer. Phase transition from the amorphous to crystalline state further leads to huge changes of optical functions demonstrated by optical contrast values up to vertical bar Delta n vertical bar + vertical bar Delta k vertical bar = 4.20 for Ga26.3Sb19.9Te53.8 Composition. (C) 2020 Optical Society of America

引用

页码：1067 / 1070

页数：4

共 31 条

[1] Experimental design approach for deposition optimization of RF sputtered chalcogenide thin films devoted to environmental optical sensors [J].