Enhanced photocatalytic activity and diode performance of ZnO-GO nanocomposites via doping with aluminum

Herein, a twofold enhancement tactics were served to boost the photocatalytic activity as well as the diode performance of ZnO. The combination of aluminum (Al) and graphene oxide (GO) with ZnO fostered photocatalytic efficiency on Cong red (CR) and magnified the rectification of The Ag/n-Zn(1-x)AlxO-GO/ p-Si/Al heterostructure diode. Zn1-xAlxO-GO nanocomposites (x = 0.0, 0.03, 0.05, and 0.07 mol, GO = 2 wt.%) were successfully synthesized by solvothermal approach as confirmed by X-ray diffraction (XRD), high-resolution transmission microscope (HRTEM), Fourier transformer infrared (FTIR) and Raman data. The grain size was found to decrease from 38.05 to 68.58 nm when Al was varied from 0.0 to 0.07 mole, as established from the size-strain plot and FESEM micrographs. The data of Raman and FT-IR evidenced the existence of Al in the ZnO matrix. The band gap energies were found to approach the boundary of visible light, as Al reached 0.07 mol. The photocatalysis experiments showed that Zn0.93Al0.07O-GO nanocomposite has a higher removal efficiency. The scavenging investigation proved that the h(+) and OH center dot are major reactive radicals. The recycling test demonstrated (ZnAlO)-Al-0.93-O-0.07-GO nanocomposite showed a high level of reusability. The Ag/n-Zn1-xAlxO-GO/p-Si/Al heterostructure diode was fabricated. The rectification and shunt resistance was boosted, whilst barrier height, ideality factor, and series resistance were decreased with the insertion of Al.