Band offset measurements of the GaN (0001)/HfO2 interface

被引：68

作者：

Cook, TE ^{[1
]}

Fulton, CC

Mecouch, WJ

Davis, RF

Lucovsky, G

Nemanich, RJ

机构：

[1] N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA

[2] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 11期

关键词：

D O I：

10.1063/1.1625579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoemission spectroscopy has been used to observe the interface electronic states as HfO2 was deposited on clean n-type Ga-face GaN (0001) surfaces. The HfO2 was formed by repeated deposition of several monolayers of Hf followed by remote plasma oxidation at 300degreesC, and a 650degreesC densification anneal. The 650degreesC anneal resulted in a 0.6 and 0.4 eV change in band bending and valence band offset, respectively. The final annealed GaN/HfO2 interface exhibited a valence band offset of 0.3 eV and a conduction band offset of 2.1 eV. A 2.0 eV deviation was found from the electron affinity band offset model. (C) 2003 American Institute of Physics.

引用

页码：7155 / 7158

页数：4

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