Quantum dot lasers based on a stacked and strain-compensated active region grown by metal-organic chemical vapor deposition

被引：45

作者：

Nuntawong, N ^{[1
]}

Xin, YC ^{[1
]}

Birudavolu, S ^{[1
]}

Wong, PS ^{[1
]}

Huang, S ^{[1
]}

Hains, CP ^{[1
]}

Huffaker, DL ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 19期

关键词：

D O I：

10.1063/1.1926413

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate an InAs/ GaAs quantum dot (QD) laser based on a strain-compensated, three- stack active region. Each layer of the stacked QD active region contains a thin GaP (Delta a(o)=- 3.8%) tensile layer embedded in a GaAs matrix to partially compensate the compressive strain of the InAs (Delta a(o)= 7%) QD layer. The optimized GaP thickness is similar to 4 MLs and results in a 36% reduction of compressive strain in our device structure. Atomic force microscope images, room-temperature photoluminescence, and x-ray diffraction confirm that strain compensation improves both structural and optical device properties. Room-temperature ground state lasing at lambda = 1.249 mu m, J(th) = 550 A/cm(2) has been demonstrated. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3