Water-penetration-assisted mechanical transfer of large-scale molybdenum disulfide onto arbitrary substrates

被引:21
作者
Lai, Shen [1 ]
Jeon, Jaeho [1 ]
Song, Young-Jae [1 ]
Lee, Sungjoo [1 ,2 ,3 ]
机构
[1] SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, South Korea
[2] Ctr Human Interface Nanotechnol HINT, Suwon 440746, South Korea
[3] Sungkyunkwan Univ SKKU, Coll Informat & Commun Engn, Suwon 440746, South Korea
基金
新加坡国家研究基金会;
关键词
MOS2; THIN-LAYERS; CRYSTALLINE MOS2; CVD GROWTH; LARGE-AREA; GRAPHENE; FILMS;
D O I
10.1039/c6ra09681f
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The transfer of two-dimensional (2D) material layers to arbitrary substrates from growth substrates is critical for many applications. Although several studies of transfer processes have been reported, a transfer method that does not degrade 2D layers and damage growth substrates is still required. In this paper, we report a method that with the assistance of water penetration enables the mechanical transfer of MoS2, one of the most widely studied 2D materials, from the growth substrate to a target substrate without any etching of the growth substrate or leaving any polymer residue on the MoS2 layer. The difference between the adhesion forces of the MoS2 and carrier films and the difference between the hydrophobicities of MoS2 and the growth substrate means that water can easily penetrate the interspace at the MoS2/growth substrate interface generated by the peeling off process. We also experimentally confirmed the usefulness of Cu carrier films as a contact material for MoS2 that enables its clean separation. Our transfer method protects the original quality and morphology of large area MoS2 without leaving any polymer residue, and enables the reuse of the growth substrate. This clean transfer approach is expected to facilitate the realization of industrial applications of MoS2 and other 2D materials.
引用
收藏
页码:S7497 / S7501
页数:5
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