Origin of operating voltage increase in deep UV light-emitting diodes with ITO/Al reflector

被引：2

作者：

Sung, Youn Joon ^{[1
]}

Kim, Dong-Woo ^{[1
]}

Yeom, Geun Young ^{[1
,2
]}

Kim, Kyu Sang ^{[3
]}

机构：

[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, Gyeonggi Do, South Korea

[2] Sungkyunkwan Univ, SKKU Adv Inst Nano Technol SAINT, Suwon 16419, Gyeonggi Do, South Korea

[3] SangjiUniv, Dept Semicond Phys & Elect, Wonju 26339, Gangwon Do, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2021年 / 60卷 / 11期

基金：

新加坡国家研究基金会;

关键词：

UV-C LED; p-electrode; ITO; Al; reflector; EFFICIENCY; ELECTRODE;

D O I：

10.35848/1347-4065/ac2d84

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In an attempt to further elucidate the operating voltage increase in a vertical UV-C LED with p-electrode composed of transparent conducting Sn-doped indium oxide (ITO)/Al reflector, the interface formation between ITO and Al thin film was studied by using scanning transmission electron microscopy in combination with electron energy loss spectroscopy. It was confirmed that the oxidized layer was formed at the interface of the ITO/Al electrode in accordance with the thermal annealing. It was found that not only the thickness of oxide formation grew with the increased annealing temperature, the content of oxygen also increased. Moreover, it was also ascertained that the prolonged annealing time at high temperature induced the indium diffusion into the Al-oxide layer.

引用

页数：5

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