Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method

被引：119

作者：

Yoshida, Takehiro ^{[1
]}

Oshima, Yuichi ^{[1
]}

Eri, Takeshi ^{[2
]}

Ikeda, Ken ^{[2
]}

Yamamoto, Shunsuke ^{[2
]}

Watanabe, Kazutoshi ^{[1
]}

Shibata, Masatomo ^{[2
]}

Mishima, Tomoyoshi ^{[1
]}

机构：

[1] Hitachi Cable Ltd, Adv Elect Mat Res Dept, Res & Dev Lab, Tsuchiura, Ibaraki 3000026, Japan

[2] Hitachi Cable Ltd, Compound Semicond Prod Div, Hitachi, Ibaraki 3191418, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 01期

关键词：

substrates; hydride vapor phase epitaxy; nitrides; semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2007.10.014

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

By using the hydride vapor phase epitaxy and a void-assisted separation method, freestanding 3-in GaN substrates were successfully fabricated for the first time, and the process showed an excellent reproducibility. A thick GaN layer 3.2 in in diameter was easily separated from the base substrate. No cracks were generated during the separation process. The dislocation density was of the order of 10(6) cm(-2). The carrier density was approximatel y 1 X 10(18) cm(-3) and the mobility was 3.4 x 10(2) cm(2) V-1 s(-1). The concentrations of impurities, estimated by secondary-ion mass spectrometry, were below the limit of detection, except for Si. The Si concentration was approximately 1 X 10(18) cm(-3), which is in good agreement with the carrier density. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：5 / 7

页数：3

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