Electron and phonon transport anisotropy of ZnO at and above room temperature

被引:17
作者
Liang, Xin [1 ,2 ,3 ]
Wang, Changan [1 ]
机构
[1] Changzhou Univ, Sch Mat Sci & Engn, Changzhou 213164, Jiangsu, Peoples R China
[2] Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China
[3] Univ Chinese Acad Sci, Sch Nanosci & Technol, Beijing 100049, Peoples R China
基金
中国国家自然科学基金;
关键词
THERMAL-CONDUCTIVITY; SINGLE-CRYSTAL; ZINC-OXIDE; WURTZITE; 1ST-PRINCIPLES; THERMOPOWER; SCATTERING; STATES; DRAG;
D O I
10.1063/1.5139563
中图分类号
O59 [应用物理学];
学科分类号
摘要
Due to the lack of experimental evidence, it is not clearly known if the charge and heat transport of ZnO exhibit noticeable anisotropy at and above room temperature. Here, we measure the charge and heat transport properties of strongly crystallographically textured ZnO polycrystals at and above room temperature, up to 750 K. Our observations reveal a remarkable difference of the electrical conductivity, Hall coefficient, Seebeck coefficient, and electron mobility between the ZnO c-axis and ab-plane directions. The origin of electron transport anisotropy is discussed. We experimentally show that the lattice thermal conductivity for the c-axis direction can be at least 20% larger than that for the ab-plane direction, and the anisotropy ratio is only weakly dependent on temperature, which qualitatively agrees well with our first-principles density functional theory (DFT) calculations. Our DFT calculations also reveal that the heat transport difference between the c-axis and ab-plane directions is due to the anisotropy in phonon group velocities and Umklapp phonon scattering rates. The present work fills in the knowledge gap about ZnO. These findings can provide important implications for designing ZnO crystals to optimize the material or device performance in numerous applications where charge and/or heat transport properties are important.
引用
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页数:5
相关论文
共 51 条
[1]  
Agrawal R, 2017, ACTA OPHTHALMOL, V95, pe597, DOI DOI 10.1103/PHYSREVB.95.155313
[2]  
[Anonymous], 2009, TOWN PLANN REV, V80, pi, DOI DOI 10.1103/PHYSREVB.80.155124
[3]  
[Anonymous], 2010, RESUSCITATION, V81, pe1, DOI DOI 10.1103/PHYSREVB.81.174304
[4]   Optically pumped lasing of ZnO at room temperature [J].
Bagnall, DM ;
Chen, YF ;
Zhu, Z ;
Yao, T ;
Koyama, S ;
Shen, MY ;
Goto, T .
APPLIED PHYSICS LETTERS, 1997, 70 (17) :2230-2232
[5]   Effect of oxygen vacancies on the elastic properties of zinc oxide: A first-principles investigation [J].
Bhat, Soumya S. ;
Waghmare, Umesh V. ;
Ramamurty, Upadrasta .
COMPUTATIONAL MATERIALS SCIENCE, 2015, 99 :133-137
[6]   PHONON DRAG IN WURTZITE-TYPE SEMICONDUCTORS [J].
BULAT, LP .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 60 (01) :451-459
[7]   ZEEMAN SPLITTING OF ANOMALOUS SHALLOW BOUND-STATES IN ZNO [J].
BUTTON, KJ ;
LAX, B ;
COHN, DR ;
ORTENBER.MV ;
MOLLWO, E ;
HELBIG, R .
PHYSICAL REVIEW LETTERS, 1972, 28 (25) :1637-&
[8]  
CAHILL DG, 1988, ANNU REV PHYS CHEM, V39, P93, DOI 10.1146/annurev.physchem.39.1.93
[9]   Prediction of the Thermal Conductivity of ZnO Nanostructures [J].
Chantrenne, P. ;
Ould-Lahoucine, C. .
JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME, 2012, 134 (04)
[10]   Materials selection guidelines for low thermal conductivity thermal barrier coatings [J].
Clarke, DR .
SURFACE & COATINGS TECHNOLOGY, 2003, 163 :67-74