Rapid lateral solidification of pure Cu and Au thin films encapsulated in SiO2 -: art. no. 201902

Excimer laser melting and lateral resolidification is demonstrated in 200 nm thick Cu and Au elemental metal thin films encapsulated between SiO2 layers. Projection irradiation is used to selectively and completely melt lines 3 to 30 mu m wide in the metal film-with rapid lateral solidification originating from the unmelted sidewalls of the molten region-resulting in large columnar grains, extending transversely to the middle of the line. Transmission electron microscopy reveals twinning structures and other defects typical of rapid solidification. Encapsulation and control of the fluence are found to be crucial parameters necessary to prevent film dewetting while molten. (c) 2005 American Institute of Physics.