Origin of dark counts in nanostructured NbN single-photon detectors

被引:38
作者
Kitaygorsky, J
Zhang, J
Verevkin, A
Sergeev, A
Korneev, A
Matvienko, V
Kouminov, P
Smirnov, K
Voronov, B
Gol'tsman, G
Sobolewski, R
机构
[1] Univ Rochester, Rochester, NY 14623 USA
[2] Univ Rochester, Rochester, NY 14627 USA
[3] SUNY Buffalo, Buffalo, NY 14260 USA
[4] Moscow State Pedag Univ, Moscow 119345, Russia
关键词
dark counts; phase-slip centers; quantum fluctuations; single-photon detectors; two-dimensional superconducting stripes;
D O I
10.1109/TASC.2005.849914
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present our study of dark counts in ultrathin (3.5 to 10 nm thick), narrow (120 to 170 mn wide) NbN superconducting stripes of different lengths. In experiments, where the stripe was completely isolated from the outside world and kept at temperature below the critical temperature T-c, we detected subnanosecond electrical pulses associated with the spontaneous appearance of the temporal resistive state. The resistive state manifested itself as generation of phase-slip centers (PSCs) in our two-dimensional superconducting stripes. Our analysis shows that not far from T-c, PSCs have a thermally activated nature. At lowest temperatures, far below T-c, they are created by quantum fluctuations.
引用
收藏
页码:545 / 548
页数:4
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