Scanning probe lithography on graphene

被引：26

作者：

Neubeck, Soeren ^{[1
]}

Freitag, Frank ^{[1
]}

Yang, Rui ^{[1
]}

Novoselov, Kostya S. ^{[1
]}

机构：

[1] Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2010年 / 247卷 / 11-12期

关键词：

graphene; local anodic oxidation; nanostructures; oxidation kinetics; OXIDATION; NANOSTRUCTURES; GRAPHITE; MODEL;

D O I：

10.1002/pssb.201000186

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this paper, we want to outline the principles of how scanning probe lithography on graphene is performed. We will show several examples of structures etched in graphene using this technique, including an example of a nanoelectronic device. In the last part, we present data regarding the oxidation kinetics when performing scanning probe lithography on graphite (HOPG). [GRAPHICS] Two lines oxidized in graphene using scanning probe lithography. The left line (indicated by the arrow) is only 30 nm wide, indicating that this technique has good enough resolution to create nanoelectronic device structures. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2904 / 2908

页数：5

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