Covalent Patterning of 2D MoS2

被引:10
|
作者
Chen, Xin [1 ]
Kohring, Malte [2 ]
Assebban, M'hamed [1 ]
Tywoniuk, Bartlomiej [3 ]
Bartlam, Cian [3 ]
Moses Badlyan, Narine [2 ]
Maultzsch, Janina [2 ]
Duesberg, Georg S. [3 ]
Weber, Heiko B. [2 ]
Knirsch, Kathrin C. [1 ]
Hirsch, Andreas [1 ]
机构
[1] Friedrich Alexander Univ Erlangen Nurnberg FAU, Dept Chem & Pharm, Nikolaus Fiebiger Str 10, D-91058 Erlangen, Germany
[2] Friedrich Alexander Univ Erlangen Nurnberg FAU, Dept Phys, Staudtstr 7, D-91058 Erlangen, Germany
[3] Univ Bundeswehr, Fac Elect Engn & Informat Technol, Inst Phys, EIT 2, D-85579 Neubiberg, Germany
基金
欧盟地平线“2020”;
关键词
functionalization; MoS2; patterning; PL; Raman spectroscopy; SINGLE-LAYER MOS2; PHASE-TRANSITION; MONOLAYER MOS2; FUNCTIONALIZATION; SPECTROSCOPY;
D O I
10.1002/chem.202102021
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The development of an efficient method to patterning 2D MoS2 into a desired topographic structure is of particular importance to bridge the way towards the ultimate device. Herein, we demonstrate a patterning strategy by combining the electron beam lithography with the surface covalent functionalization. This strategy allows us to generate delicate MoS2 ribbon patterns with a minimum feature size of 2 mu m in a high throughput rate. The patterned monolayer MoS2 domain consists of a spatially well-defined heterophase homojunction and alternately distributed surface characteristics, which holds great interest for further exploration of MoS2 based devices.
引用
收藏
页码:13117 / 13122
页数:6
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