Effect of hafnium contaminant present in zirconium targets on sputter deposited ZrN thin films

被引：21

作者：

Fernandez, D. A. R. ^{[1
]}

Brito, B. S. S. ^{[1
]}

Santos, I. A. D. ^{[1
]}

Soares, V. F. D. ^{[1
]}

Terto, A. R. ^{[1
]}

de Oliveira, G. B. ^{[1
]}

Hubler, R. ^{[2
]}

Batista, W. W. ^{[1
]}

Tentardini, E. K. ^{[1
]}

机构：

[1] Univ Fed Sergipe, Av Marechal Rondon S-N, Sao Cristovao, SE, Brazil

[2] Pontificia Univ Catolica Rio Grande do Sul PUCRS, Av Ipiranga 6681, Porto Alegre, RS, Brazil

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2020年 / 462卷

关键词：

ZrN; Hafnium; Inherent impurity; Thin films; MECHANICAL-PROPERTIES; FREQUENCY;

D O I：

10.1016/j.nimb.2019.11.005

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Zirconium nitride thin films deposited by reactive magnetron sputtering recurrently present small amounts of hafnium (similar to 1 at.%) in their composition derived from an inherent impurity existing in Zr targets. Hf presence in ZrN coatings is neglected by most of the researchers despite its known potential to modify properties of thin films. In this work, pure ZrN (0.9 at.% Hf contaminant) and ZrHfN thin films with intentional hafnium addition of 1.8, 3.7 and 5.5 at.% were deposited by reactive magnetron sputtering and characterized by RBS, GAXRD, SEM, nanohardness and high temperature oxidation tests. Based on the results, it is suggested that inherent hafnium presence in zirconium targets contributes for the good hardness values and oxidation resistance at 773 K registered for ZrN thin films.

引用

页码：90 / 94

页数：5

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