Silicon Technologies and Circuits for RF and mm-Wave Applications

被引:0
作者
Dielacher, Franz [1 ]
Tiebout, Marc [1 ]
Singerl, Peter [1 ]
Seebacher, David [2 ]
机构
[1] Infineon Technol Austria AG, Villach, Austria
[2] Graz Univ Technol, Graz, Austria
来源
2014 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT): SILICON TECHNOLOGY HEATS UP FOR THZ | 2014年
关键词
D O I
暂无
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
The presentation will start with an overview of the features and capabilities of state-of-the-art SiGe-BiCMOS and RF-amplifier technologies for applications such as high-data-rate communications, phased-arrays and pro-active safety systems like identification and e-safety. The capabilities offered by SiGe-BiCMOS and microwave packaging enable the integration of complete multichannel transceivers on a chip or in a package even including the antennas. The criteria and trade-off's for the technology selection and system partitioning will be discussed in part two of the presentation. In addition to the electrical components performance, major criteria such as high reliability, long lifetime and high yield fabrication will be addressed. Advanced packaging technologies will be presented as well, including embedded passive components and package co-design. Finally existing circuit design examples and future solutions for pro-active safety systems will be presented, followed by power-amlifiers and high-speed transceivers for communications and point-to-point links.
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页数:5
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