High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells

被引：15

作者：

Kovsh, AR

Zhukov, AE

Maleev, NA

Mikhrin, SS

Livshits, DA

Shernyakov, YM

Maximov, MV

Pihtin, NA

Tarasov, IS

Ustinov, VM

Alferov, ZI

Wang, JS

Wei, L

Lin, G

Chi, JY

Ledentsov, NN

Bimberg, D

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Ind Technol Res Inst, Hsinchu 310, Taiwan

[3] Tech Univ Berlin, D-10623 Berlin, Germany

来源：

MICROELECTRONICS JOURNAL | 2003年 / 34卷 / 5-8期

关键词：

quantum dots; molecular beam epitaxy; lasers;

D O I：

10.1016/S0026-2692(03)00082-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Broad area lasers based on InAs-GaAs quantum dots formed by submonolayer deposition were fabricated. High modal gain of submonolayer quantum dots permits the use of broad-waveguide and highly doped design. Continuous wave output power of 6 W limited by mirror damage and conversion efficiency of 58% were demonstrated at 20 degreesC. The characteristic temperature of 150 K was achieved. (C) 2003 Published by Elsevier Science Ltd.

引用

页码：491 / 493

页数：3

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