Parametric evaluation of shear sensitivity in piezoresistive interfacial force sensors

被引:9
作者
Benfield, David [1 ]
Lou, Edmond [2 ]
Moussa, Walied A. [1 ]
机构
[1] Univ Alberta, Dept Mech Engn, Edmonton, AB T6G 2M7, Canada
[2] Univ Alberta, Dept Elect & Comp Engn, Edmonton, AB T6G 2M7, Canada
关键词
PIEZOELECTRIC TACTILE SENSOR; PRESSURE SENSORS; 4-TERMINAL GAUGE; STRESS SENSOR; SILICON; DESIGN; FABRICATION; OPTIMIZATION; RESISTANCE; NOISE;
D O I
10.1088/0960-1317/21/4/045005
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A three-axis load detector has been designed and manufactured utilizing four piezoresistive sensors on a flexible silicon membrane. The detector was prototyped using bulk microfabrication techniques on a single-crystal silicon wafer and was designed to detect normal and shear loadings applied to the membrane. Finite element analysis and experimental calibration methods have been used to determine the shear and normal sensitivity values. Device parameters were modified with emphasis on increasing the absolute shear to normal sensitivity ratio of the sensors without reducing their ultimate strength. It was determined that the shear to normal sensitivity ratio greater than 0.5 would allow detection of shear loads considering experimental error present. For devices with square membranes having 1000 mu m edge lengths and 65 mu m thicknesses, this amount of shear sensitivity was achievable using a mesa with a height of at least 150 mu m.
引用
收藏
页数:10
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