The effect of ion mass on irradiation induced intermixing of GaAs/AlGaAs quantum wells

被引：0

作者：

Goldberg, RD ^{[1
]}

Tan, HH ^{[1
]}

Johnston, MB ^{[1
]}

Jagadish, C ^{[1
]}

Gal, M ^{[1
]}

Mitchell, IV ^{[1
]}

机构：

[1] Univ Western Ontario, Dept Phys & Astron, London, ON N6A 3K7, Canada

来源：

MATERIALS MODIFICATION BY ION IRRADIATION | 1998年 / 3413卷

关键词：

quantum well; intermixing; ion implantation; GaAs/AlGaAs heterostructure; bandgap adjustment;

D O I：

10.1117/12.321942

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A comparison has been made of the shifts induced in the photoluminescence (PL) emission wavelength of a GaAs/AlGaAs multiple quantum well (QW) structure following irradiation with H He and As ions. Ion energies and fluences were chosen to produce matching numbers and distributions of lattice atom displacements across the structure. Samples were then annealed at 900 degrees C for 30s to intermix the QWs and low temperature photoluminescence was used to measure the shifts in the QW bandgap energies. At common concentration of atomic displacements (vacancies). the PL blueshift increased with the mass of the implanted ion For these anneal parameters, saturation of the blueshift from the narrowest (2.3 nm) QW was observed in all three irradiations at an average vacancy production concentration of similar to 10(22) cm(-3). No significant difference in PL shifts was found when the irradiations were performed at 200 degrees C sample temperature.

引用

页码：140 / 145

页数：6