Study on the local stress induced dislocations on ((1)over-bar(1)over-bar(1)over-bar) Te face of CdTe-based crystals

被引:6
作者
Fu, Xu
Xu, Yadong
Xu, Lingyan
Gu, Yaxu
Jia, Ningbo
Jie, Wanqi [1 ]
机构
[1] Northwestern Polytech Univ, State Key Lab Solidificat Proc, Xian 710072, Shaanxi, Peoples R China
关键词
Crystal structure; Defects; Stresses; Dislocations; Semiconducting II-VI materials; CdZnTe; CADMIUM ZINC TELLURIDE; SEMICONDUCTOR RADIATION DETECTORS; OPTICAL-PROPERTIES; CDZNTE DETECTORS; SINGLE-CRYSTALS; DEFECTS; DEFORMATION; PHOTOLUMINESCENCE; INDENTATION; PERFORMANCE;
D O I
10.1016/j.jcrysgro.2017.06.018
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The rosette-like dislocation clusters around Te inclusions in as-grown CdZnTe/CdTe crystals and those introduced by the micro-indentation on CdZnTe/CdTe surface are studied experimentally. The extended dislocation patterns are formed around Te inclusions in both CdZnTe and CdTe crystals, owing to the build-in stress. Two mutually orthogonal tetrahedrons are observed in CdZnTe crystal. However, the "double-arms" dislocation rosette pattern extended along < 110 > direction is observed in CdTe crystal. The Peierls kink pair mechanism and the Hirsch effects are used to explain the discrepancy of these two different rosette patterns. Similar dislocation rosette patterns are observed on indentation surface of CdZnTe crystal. The dislocation rosette patterns are found to be independent of the indenter orientation, but completely determined by the crystallographic properties of zinc-blende structure of the crystal. Furthermore, the Te(g) and Cd(g) dislocation arms are found to be mixed and bended with each other in CdTe crystal under high indentation stress, making it different from that generated around Te inclusions. A model concerning the comprehensive impact of stress field and electronic polarities dislocations is proposed to clarify the dislocation bending phenomenon. (C) 2017 Published by Elsevier B.V.
引用
收藏
页码:71 / 76
页数:6
相关论文
共 50 条
  • [21] Interfacial structure of {1 0 (1)over-bar 2} twin tip in deformed magnesium alloy
    Sun, Q.
    Zhang, X. Y.
    Ren, Y.
    Tu, J.
    Liu, Q.
    SCRIPTA MATERIALIA, 2014, 90-91 : 41 - 44
  • [22] The f(a)over-bar' of hypothetical systems in Classical Arabic in: criteria for predicting semantic values def(a)over-bar'
    Sartori, Manuel
    ARABICA, 2023, 70 (1-2) : 157 - 210
  • [23] Excellent antibacterial activities in the dark of ZnO nanoflakes with oxygen vacancies on exposed {2(1)over-bar(1)over-bar0} facets
    Zhou, Ying
    Guo, Yifan
    Li, Jinyang
    Wei, Wei
    Li, Dan
    Luo, Lihui
    Xu, Xiaoling
    Zhou, Zuowan
    JOURNAL OF MATERIALS CHEMISTRY A, 2020, 8 (23) : 11511 - 11514
  • [24] Dissociation of ⟨111⟩ dislocations on {11(0)over-bar} in pentaerythritol tetranitrate
    Cawkwell, M. J.
    Mohan, N.
    Luscher, D. J.
    Ramos, K. J.
    PHILOSOPHICAL MAGAZINE, 2019, 99 (09) : 1079 - 1089
  • [25] DISSOCIATION OF 1/3[(1)OVER-BAR(1)OVER-BAR26](11(2)OVER-BAR1) SUPERDISLOCATIONS IN T1(3)AL SINGLE-CRYSTALS DEFORMED AT HIGH-TEMPERATURES
    MINONISHI, Y
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1995, 192 : 830 - 836
  • [26] Deformation modes in magnesium (0001) and (0 1 (1)over-bar 1) single crystals: simulations versus experiments
    Luque, A.
    Ghazisaeidi, M.
    Curtin, W. A.
    MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, 2013, 21 (04)
  • [27] A study of dislocations in InGaN/GaN multiple-quantum-well structure grown on (1 1 (2)over-bar 0) sapphire substrate
    Bai, J
    Wang, T
    Izumi, Y
    Sakai, S
    JOURNAL OF CRYSTAL GROWTH, 2001, 223 (1-2) : 61 - 68
  • [28] Optimization of a-plane (1 1 (2)over-bar 0) InN grown via MOVPE on a-plane GaN buffer layers on r-plane (1 (1)over-bar 0 2) sapphire
    Laskar, Masihhur R.
    Kadir, Abdul
    Rahman, A. A.
    Shah, A. P.
    Hatui, Nirupam
    Gokhale, M. R.
    Bhattacharya, Arnab
    JOURNAL OF CRYSTAL GROWTH, 2010, 312 (14) : 2033 - 2037
  • [29] Enhanced nitrogen incorporation in the ⟨11(2)over-bar0⟩ directions on the (000(1)over-bar) facet of 4H-SiC crystals
    Hashiguchi, Takato
    Ota, Takuto
    Asano, Shunsuke
    Ohtani, Noboru
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2022, 61 (09)
  • [30] The synthetic (X)over-bar chart with estimated parameters
    Zhang, Ying
    Castagliola, Philippe
    Wu, Zhang
    Khoo, Michael B. C.
    IIE TRANSACTIONS, 2011, 43 (09) : 676 - 687