Study on the local stress induced dislocations on ((1)over-bar(1)over-bar(1)over-bar) Te face of CdTe-based crystals

被引：6
作者：
Fu, Xu
Xu, Yadong
Xu, Lingyan
Gu, Yaxu
Jia, Ningbo
Jie, Wanqi [1 ]
机构：
[1] Northwestern Polytech Univ, State Key Lab Solidificat Proc, Xian 710072, Shaanxi, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2017年 / 478卷
关键词：
Crystal structure; Defects; Stresses; Dislocations; Semiconducting II-VI materials; CdZnTe; CADMIUM ZINC TELLURIDE; SEMICONDUCTOR RADIATION DETECTORS; OPTICAL-PROPERTIES; CDZNTE DETECTORS; SINGLE-CRYSTALS; DEFECTS; DEFORMATION; PHOTOLUMINESCENCE; INDENTATION; PERFORMANCE;
D O I：
10.1016/j.jcrysgro.2017.06.018
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The rosette-like dislocation clusters around Te inclusions in as-grown CdZnTe/CdTe crystals and those introduced by the micro-indentation on CdZnTe/CdTe surface are studied experimentally. The extended dislocation patterns are formed around Te inclusions in both CdZnTe and CdTe crystals, owing to the build-in stress. Two mutually orthogonal tetrahedrons are observed in CdZnTe crystal. However, the "double-arms" dislocation rosette pattern extended along < 110 > direction is observed in CdTe crystal. The Peierls kink pair mechanism and the Hirsch effects are used to explain the discrepancy of these two different rosette patterns. Similar dislocation rosette patterns are observed on indentation surface of CdZnTe crystal. The dislocation rosette patterns are found to be independent of the indenter orientation, but completely determined by the crystallographic properties of zinc-blende structure of the crystal. Furthermore, the Te(g) and Cd(g) dislocation arms are found to be mixed and bended with each other in CdTe crystal under high indentation stress, making it different from that generated around Te inclusions. A model concerning the comprehensive impact of stress field and electronic polarities dislocations is proposed to clarify the dislocation bending phenomenon. (C) 2017 Published by Elsevier B.V.
引用
收藏
页码：71 / 76
页数：6
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