Piezoelectric actuation of PZT thin-film diaphragms at static and resonant conditions

被引：163
作者：
Muralt, P
Kholkin, A
Kohli, M
Maeder, T
机构：
[1] Laboratory of Ceramic Materials, Swiss Fed. Institute of Technology, MXD Ecublens
[2] Laboratory of Ceramic Materials, Swiss Fed. Institute of Technology, Lausanne
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 1996年 / 53卷 / 1-3期
关键词：
piezoelectricity; thin films; ultrasonic actuators;
D O I：
10.1016/0924-4247(96)01139-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The piezoelectric response of silicon diaphragms covered with sputter-deposited PbZr0.45Ti0.55O3 (PZT) films has been investigated in view of their application in ultrasonic micro-actuators. The behaviour of resonance frequencies and quasistatic deflections has been studied as a function of membrane thickness and d.c. bias. The total stress in the films and the piezoelectric constant, d(31), have been derived by means of two different methods. The results are consistent with direct strain measurements by optical interferometry and with bulk ceramic values of identical composition.
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收藏
页码：398 / 404
页数：7
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