Interface and strain effects on the fabrication of suspended CVD graphene devices

被引：11
作者：
Aydin, O. I. [1 ]
Hallam, T. [2 ]
Thomassin, J. L. [3 ]
Mouis, M. [1 ]
Duesberg, G. S. [2 ]
机构：
[1] Grenoble INP Minatec, IMEP LAHC, F-38016 Grenoble, France
[2] Univ Dublin Trinity Coll, CRANN, Dublin 2, Ireland
[3] CEA INAC, SPSMS, F-38054 Grenoble 9, France
来源：
SOLID-STATE ELECTRONICS | 2015年 / 108卷
关键词：
CVD graphene; Suspended beams; Processing technology; Mechanical strain; Folds; Raman; AFM; RAMAN-SPECTROSCOPY; LARGE-AREA; SCATTERING; MONOLAYER; FILMS;
D O I：
10.1016/j.sse.2014.12.003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It is known that the fabrication of graphene NEMS raises several technological issues. The most mentioned among these is beam collapse due to the capillary effects. However, we found that controlling the quality of the interface of graphene and the etch mask requires at least equal attention. By taking this into account, we succeeded developing a robust route for the fabrication of suspended graphene structures, using technological steps compatible with large-scale fabrication. AFM and Raman characterization results are used to probe suspension, added defects and strain evolution during the process. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码：75 / 83
页数：9
相关论文
共 27 条
  • [1] Probing the Intrinsic Properties of Exfoliated Graphene: Raman Spectroscopy of Free-Standing Monolayers
    Berciaud, Stephane
    Ryu, Sunmin
    Brus, Louis E.
    Heinz, Tony F.
    [J]. NANO LETTERS, 2009, 9 (01) : 346 - 352
  • [2] Graphene Nanoelectromechanical Systems
    Chen, Changyao
    Hone, James
    [J]. PROCEEDINGS OF THE IEEE, 2013, 101 (07) : 1766 - 1779
  • [3] Raman spectroscopy of substrate-induced compression and substrate doping in thermally cycled graphene
    Chen, Chun-Chung
    Bao, Wenzhong
    Chang, Chia-Chi
    Zhao, Zeng
    Lau, Chun Ning
    Cronin, Stephen B.
    [J]. PHYSICAL REVIEW B, 2012, 85 (03):
  • [4] Cullinan M, 2013, MAMNA
  • [5] Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor
    Das, A.
    Pisana, S.
    Chakraborty, B.
    Piscanec, S.
    Saha, S. K.
    Waghmare, U. V.
    Novoselov, K. S.
    Krishnamurthy, H. R.
    Geim, A. K.
    Ferrari, A. C.
    Sood, A. K.
    [J]. NATURE NANOTECHNOLOGY, 2008, 3 (04) : 210 - 215
  • [6] Raman spectrum of graphene and graphene layers
    Ferrari, A. C.
    Meyer, J. C.
    Scardaci, V.
    Casiraghi, C.
    Lazzeri, M.
    Mauri, F.
    Piscanec, S.
    Jiang, D.
    Novoselov, K. S.
    Roth, S.
    Geim, A. K.
    [J]. PHYSICAL REVIEW LETTERS, 2006, 97 (18)
  • [7] Raman spectroscopy as a versatile tool for studying the properties of graphene
    Ferrari, Andrea C.
    Basko, Denis M.
    [J]. NATURE NANOTECHNOLOGY, 2013, 8 (04) : 235 - 246
  • [8] Raman 2D-Band Splitting in Graphene: Theory and Experiment
    Frank, Otakar
    Mohr, Marcel
    Maultzsch, Janina
    Thomsen, Christian
    Riaz, Ibtsam
    Jalil, Rashid
    Novoselov, Kostya S.
    Tsoukleri, Georgia
    Parthenios, John
    Papagelis, Konstantinos
    Kavan, Ladislav
    Galiotis, Costas
    [J]. ACS NANO, 2011, 5 (03) : 2231 - 2239
  • [9] Strain, Bubbles, Dirt, and Folds: A Study of Graphene Polymer-Assisted Transfer
    Hallam, Toby
    Berner, Nina C.
    Yim, Chanyoung
    Duesberg, Georg S.
    [J]. ADVANCED MATERIALS INTERFACES, 2014, 1 (06):
  • [10] Graphene transfer with reduced residue
    Her, Michael
    Beams, Ryan
    Novotny, Lukas
    [J]. PHYSICS LETTERS A, 2013, 377 (21-22) : 1455 - 1458
123