High rate deposition of silicon nitride films by APCVD

被引:27
作者
Otani, T [1 ]
Hirata, M [1 ]
机构
[1] Nippon Sheet Glass Co Ltd, Tech Res Lab, Itami, Hyogo 6648520, Japan
关键词
ammonia; chemical vapor deposition (CVD); silane; silicon nitride;
D O I
10.1016/S0040-6090(03)00938-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Silicon nitride films have been prepared by atmospheric pressure chemical vapor deposition (APCVD) on moving glass substrates from a gas mixture of monosilane, ammonia and nitrogen. The CVD reactor system used in this work is similar to those used in APCVD during a float glass production process (on-line CVD). At the substrate temperature of 830 degreesC, we prepared silicon nitride films and the deposition rate was over 10 nm/s. The deposition rates measured are not high enough at the temperatures typical of most on-line processes (650-750 degreesC). The deposition rate and the characteristics of silicon nitride films have been investigated using ellipsometry, X-ray photoemission spectroscopy (XPS) and Rutherford backscattering spectroscopy (RBS). The obtained film is transparent and the refractive index at the wavelength of 550 nm is 1.90-1.97. The film composition depends on the ratio of NH3 to SiH4 in the source gas and the hydrogen concentration is approximately 15%. It seems that hydrogen atoms incorporated in the film affect properties of the films. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:44 / 47
页数:4
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