Probing residual strain in epitaxial graphene layers on 4H-SiC (000(1)over-bar) with Raman spectroscopy

被引：21
作者：
Strudwick, A. J. [1 ]
Creeth, G. L. [1 ]
Johansson, N. A. B. [1 ]
Marrows, C. H. [1 ]
机构：
[1] Univ Leeds, Sch Phys & Astron, Leeds LS2 9JT, W Yorkshire, England
来源：
APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 05期
基金：
英国工程与自然科学研究理事会;
关键词：
GRAPHITE;
D O I：
10.1063/1.3551625
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Raman microspectroscopy was used to measure compressive strain within epitaxial graphene (EG) grown on the carbon-terminated SiC(000 (1) over bar) face as a function of annealing time for a growth temperature of 1400 degrees C. A maximum strain of -0.5% was seen at the longest time of 55 min. This differs from the -0.9% expected for strain caused by cooling from the growth temperature due to the differential thermal contraction between the SiC and EG layer, despite good agreement between this model and data on EG on SiC (0001). We suggest that this is due to the different EG bonding mechanisms on the two SiC faces. (c) 2011 American Institute of Physics. [doi: 10.1063/1.3551625]
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页数：3
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