GaN based HEMT technology for Power and RF applications

被引：0
|
作者：
Heuken, Michael [1 ]
机构：
[1] AIXTRON SE, Corp Res & Dev, Herzogenrath, Germany
来源：
49TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2019) | 2019年
关键词：
MOCVD; GaN based HEMT; epitaxy; production; HETEROSTRUCTURES;
D O I：
10.1109/essderc.2019.8901784
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper reports on basic principles and the recent progress of the MOCVD production technology for manufacturing of wide bandgap semiconductor power device and RF stacks. High throughput processing built on wafer level automation, chamber cleaning technology for reliable chamber resetting and in-situ control of key process parameters are improving the robustness of the manufacturing process and ultimately lead to higher production yield and lower manufacturing cost. Basis for this development is the Planetary Reactor (R) allowing cost-effective multiwafer batch processes on 150 and 200 mm large area substrates with single wafer precision and uniformity.
引用
收藏
页码：17 / 20
页数：4
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