Effect of carbon doping on microstructure, electronic and magnetic properties of Cr:AlN films

被引:8
作者
Zeng, F. [1 ]
Chen, C. [1 ]
Fan, B. [1 ]
Yang, Y. C. [1 ]
Yang, P. Y. [1 ]
Luo, J. T. [1 ]
Pan, F. [1 ]
Yan, W. S. [2 ]
机构
[1] Tsinghua Univ, Dept Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China
[2] Univ Sci & Technol China, NSRL, Hefei 230029, Peoples R China
基金
中国国家自然科学基金;
关键词
Magnetic films and multilayers; NEXAFS; Magnetic measurements; Electronic transport; Semiconductors; FERROMAGNETISM; RAMAN; TEMPERATURE; CHROMIUM; ABSORPTION; SPECTRA; ALN;
D O I
10.1016/j.jallcom.2010.09.052
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Carbon was doped into Cr:AlN films. Microstructure analysis demonstrated that the Cr atom kept at AlN lattice when carbon content was lower. The doped carbon atoms formed graphite phases and C-N clusters dispersing in the films, which influenced the electric and magnetic properties significantly. When the resistivity was around 10(5)-10(7) Omega cm under an alternating current (AC) frequency of 210 Hz, it increased with increasing carbon content, and when the resistivity was around 10(3) Omega cm under a higher AC frequency of 800 kHz, it decreased with increasing carbon content. The magnetisms for the carbon-doped samples are stronger than those of samples without carbon doping. The atomic magnetic moment (AMM) of the sample with a carbon content of 2.3 at.% was the highest (0.4 mu(B)/Cr). It was proposed that atomic migration of carbon might have occurred under high AC frequency. The formation of C-N compounds could consume part of the available nitrogen and then increased the density of N vacancy in the Cr:AlN lattice, which is favorable for coupling among bound magnetic polarons (BMP). (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:440 / 446
页数:7
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