Zinc-hyperdoped silicon nanocrystalline layers prepared via nanosecond laser melting for broad light absorption

被引:14
作者
Wen, C. [1 ]
Shi, Z. Q. [1 ]
Wang, Z. J. [1 ]
Wang, J. X. [1 ]
Yang, Y. J. [1 ]
Ma, Y. J. [2 ]
Yang, W. B. [1 ]
机构
[1] Southwest Univ Sci & Technol, Sch Sci, State Key Lab Environm Friendly Energy Mat, Mianyang 621010, Sichuan, Peoples R China
[2] Southwest Univ Sci & Technol, Analyt & Testing Ctr, Mianyang 621010, Sichuan, Peoples R China
基金
中国国家自然科学基金;
关键词
Hyperdoped silicon; Nanocrystalline layer; Nanosecond laser melting; Light absorption; Electrical transport; Microstructural characterization; INFRARED-ABSORPTION; BLACK SILICON; FEMTOSECOND; MICROSTRUCTURES;
D O I
10.1016/j.optlastec.2021.107415
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Current techniques for hyperdoping of Si wafer surface by femtosecond laser or ion implantation have encountered several problems for device fabrication, such as severe lattice defects, shallow doping depth, poor electrical activity of impurities, difficult collection of charge carriers, or weak compatibility with present complementary metal-oxidesemiconductor processes. To provide a new way to solve these problems, in this study, Zn-hyperdoped Si layers were prepared on polycrystalline Si substrates by vacuum evaporation and nanosecond (ns) laser melting under different conditions of deposition and laser treatment. As a result, the hyperdoped Si layers of up to micron-level thickness with a broad light absorption (above 90% from the ultraviolet to the visible range and up to 54% for the near-infrared spectrum) and good electrical transport properties (electron mobility of up to 88.5 cm2.V- 1s- 1 and sheet resistance of - 100 Omega.square- 1) were obtained. These hyperdoped Si layers can be flexibly superimposed on the existing Si optoelectronic devices: Such tandem structure avoids the damage of substrate and provides both the layers and substrate properties. In addition, the variation in the microstructural characteristics of the Zn-hyperdoped Si layers consisting of surface and cross-section structures, Zn impurity distribution and concentration, and crystallinity were carefully studied to clarify the relationships between their preparation conditions, microstructures, and physical properties. The results show that a matching between the thickness of Si-Zn deposited layer and the ns-laser irradiation fluence is crucial to achieve a full melting process and to obtain excellent Zn-hyperdoped Si layers. Their near-infrared absorption and electrical transport properties are determined by the combined effects of surface antireflection, Zn-hyperdoping, and nanocrystallization.
引用
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页数:10
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共 47 条
[1]   Laser induced lifetime degradation in p-type crystalline silicon [J].
Ametowobla, M. ;
Bilger, G. ;
Koehler, J. R. ;
Werner, J. H. .
JOURNAL OF APPLIED PHYSICS, 2012, 111 (11)
[2]   Photoelectric and magnetic properties of Fe-hyperdoped Si layers formed by the recoil-atom implantation [J].
Batalov, Rafael ;
Bayazitov, Rustem ;
Faizrakhmanov, Ildar ;
Khaibullin, Rustam ;
Tagirov, Lenar ;
Gumarov, Amir ;
Vdovin, Vladimir .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2020, 105
[3]   Room-temperature short-wavelength infrared Si photodetector [J].
Berencen, Yonder ;
Prucnal, Slawomir ;
Liu, Fang ;
Skorupa, Ilona ;
Huebner, Rene ;
Rebohle, Lars ;
Zhou, Shengqiang ;
Schneider, Harald ;
Helm, Manfred ;
Skorupa, Wolfgang .
SCIENTIFIC REPORTS, 2017, 7
[4]   Sub-surface damage in indium phosphide caused by micromachining of grooves with femtosecond and nanosecond laser pulses [J].
Borowiec, A ;
Couillard, M ;
Botton, GA ;
Haugen, HK .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2004, 79 (08) :1887-1890
[5]   Experimental verification of intermediate band formation on titanium-implanted silicon [J].
Castan, H. ;
Perez, E. ;
Garcia, H. ;
Duenas, S. ;
Bailon, L. ;
Olea, J. ;
Pastor, D. ;
Garcia-Hemme, E. ;
Irigoyen, M. ;
Gonzalez-Diaz, G. .
JOURNAL OF APPLIED PHYSICS, 2013, 113 (02)
[6]   Infrared absorption by sulfur-doped silicon formed by femtosecond laser irradiation [J].
Crouch, CH ;
Carey, JE ;
Shen, M ;
Mazur, E ;
Génin, FY .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2004, 79 (07) :1635-1641
[7]   Comparison of structure and properties of femtosecond and nanosecond laser-structured silicon [J].
Crouch, CH ;
Carey, JE ;
Warrender, JM ;
Aziz, MJ ;
Mazur, E ;
Génin, FY .
APPLIED PHYSICS LETTERS, 2004, 84 (11) :1850-1852
[8]   Insulator-to-Metal Transition in Selenium-Hyperdoped Silicon: Observation and Origin [J].
Ertekin, Elif ;
Winkler, Mark T. ;
Recht, Daniel ;
Said, Aurore J. ;
Aziz, Michael J. ;
Buonassisi, Tonio ;
Grossman, Jeffrey C. .
PHYSICAL REVIEW LETTERS, 2012, 108 (02)
[9]   Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing [J].
Franta, Benjamin ;
Pastor, David ;
Gandhi, Hemi H. ;
Rekemeyer, Paul H. ;
Gradecak, Silvija ;
Aziz, Michael J. ;
Mazur, Eric .
JOURNAL OF APPLIED PHYSICS, 2015, 118 (22)
[10]   Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector [J].
Garcia-Hemme, E. ;
Garcia-Hernansanz, R. ;
Olea, J. ;
Pastor, D. ;
del Prado, A. ;
Martil, I. ;
Gonzalez-Diaz, G. .
APPLIED PHYSICS LETTERS, 2014, 104 (21)