4-AcNI - a new polymer for light-emitting diodes

被引：45
作者：
Morgado, J
Gruner, J
Walcott, SP
Yong, TM
Cervini, R
Moratti, SC
Holmes, AB
Friend, RH
机构：
[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
[2] Inst Super Tecn, Dept Engn Quim, P-1096 Lisbon, Portugal
[3] Univ Cambridge, Chem Lab, Cambridge CB2 1EW, England
来源：
SYNTHETIC METALS | 1998年 / 95卷 / 02期
关键词：
4-acetamido-substituted naphthalimide; electron-transport material; light-emitting diodes; electroluminescence; poly(p-phenylene vinylene);
D O I：
10.1016/S0379-6779(98)00042-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report investigations on a 4-acetamido-substituted naphthalimide polymer (4-AcNI) as a component for light-emitting diodes (LEDs). Devices prepared with 4-AcNI as the active material are relatively inefficient (4 x 10(-4)%). Higher internal quantum efficiency values of 0.4% are achieved if 4-AcNI is used as an electron-transporting layer (ETL) in devices which use poly(p-phenylene vinylene) (PPV) as a hole transport layer. For Al cathodes, this material proves to be superior to similar devices which use 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD) as the ETL. The results are used to shed some light on the function of ETLs in organic LEDs. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：113 / 117
页数：5
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