High concentration doping of 6H-SiC by ion implantation: Flash versus furnace annealing

被引：5

作者：

Panknin, D ^{[1
]}

Wirth, H ^{[1
]}

Anwand, W ^{[1
]}

Brauer, G ^{[1
]}

Skorupa, W ^{[1
]}

机构：

[1] Forschungszentrum Rossendorf EV, Inst Ionenstrahlphys & Mat Forsch, DE-01314 Dresden, Germany

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

aluminum; annealing; electrical activation; ion implantation; nitrogen;

D O I：

10.4028/www.scientific.net/MSF.338-342.877

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical properties of high concentration aluminum and nitrogen implanted layers have been investigated after furnace as well as flash lamp annealing. For Al doped layer the electrical efficiency is enhanced using flash lamp annealing. For highest Al concentrations the doped layer shows metal like conductivity. For N doped layers the flash lamp annealing effects no increase of the carrier concentration. Due to the short annealing time only the nitrogen on hexagonal sites is electrically active. Flash lamp annealing produced no extra damage of the vacancy type as proved by Positron Annihilation Spectroscopy.

引用

页码：877 / 880

页数：4

共 10 条

[1] ACTIVATION OF ION-IMPLANTED DOPANTS IN ALPHA-SIC [J].

AHMED, S ;

BARBERO, CJ ;

SIGMON, TW .

APPLIED PHYSICS LETTERS, 1995, 66 (06) :712-714

[2] Possible method of reducing annealing temperatures of radiation defects in ion-implanted silicon carbide [J].

Dzhibuti, ZV ;

Dolidze, ND ;

Narsiya, GS ;

Eristavi, GL .

TECHNICAL PHYSICS LETTERS, 1997, 23 (10) :746-747

[3] NITROGEN IMPLANTATION IN (100)-BETA-SIC LAYERS GROWN ON SI SUBSTRATE [J].

HIRANO, Y ;

INADA, T .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (03) :1020-1028

[4]

NIEMANN E, Patent No. 198082460

[5] Activation of nitrogen implants in 6H-SiC [J].

Pan, JN ;

Cooper, JA ;

Melloch, MR .

JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (03) :208-211

[6] Correlation of electrical and microstructural properties after high dose aluminium implantation into 6H-SiC [J].

Panknin, D ;

Wirth, H ;

Mücklich, A ;

Skorupa, W .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 :363-367

[7]

PANSL G, 1989, ADV PHYSICS MAT, P159

[8] ELECTRICAL AND OPTICAL CHARACTERIZATION OF SIC [J].

PENSL, G ;

CHOYKE, WJ .

PHYSICA B-CONDENSED MATTER, 1993, 185 (1-4) :264-283

[9] Efficient p-type doping of 6H-SiC: Flash-lamp annealing after aluminum implantation [J].

Wirth, H ;

Panknin, D ;

Skorupa, W ;

Niemann, E .

APPLIED PHYSICS LETTERS, 1999, 74 (07) :979-981

[10] NITROGEN ION-IMPLANTATION INTO 6H-SIC AND APPLICATION TO HIGH-TEMPERATURE, RADIATION-HARD DIODES [J].

YAGUCHI, S ;

KIMOTO, T ;

OHYAMA, N ;

MATSUNAMI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (6A) :3036-3042

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