Physics, growth, and performance of (In,Ga)As-AIP/InP quantum-cascade lasers emitting at λ < 4μm

被引：8
作者：
Masselink, W. Ted [1 ]
Semtsiv, Mykhaylo P. [1 ]
Dressler, Sebastian [1 ]
Ziegler, Mathias [1 ]
Wienold, Martin [1 ]
机构：
[1] Humboldt Univ, Dept Phys, D-12489 Berlin, Germany
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2007年 / 244卷 / 08期
关键词：
D O I：
10.1002/pssb.200675614
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The design strategy and performance for short wavelength (A 4 mu m) quantum-cascade lasers (QCLs) is discussed. The QCLs are based on strain-compensated AlAs-In0.73Ga0.27As heterostructures grown using gas-source molecular-beam epitaxy on InP substrates. Both composite barriers based on AlAs-In0.55Al0.45As and composite wells based on ln(0.73)Ga(0.27)As-In0.55Al0.45As are used to achieve laser emission at wavelengths as short as 3.05 mu m by avoiding leakage from the upper laser state into either the higher-lying miniband or into indirect states within the heterostructure. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：2906 / 2915
页数：10
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