Review of wide band-gap technology: power device, gate driver, and converter design

被引：6

作者：

Ravinchandra, Krishna ^{[1
]}

Freddy, Tan Kheng Suan ^{[1
]}

Lee, June-Seok ^{[2
]}

Lee, Kyo-Beum ^{[3
]}

Mantooth, Homer Alan ^{[4
]}

Thiruchelvam, Vinesh ^{[1
]}

Xian, Jerome Ignatius Yuen Yi ^{[1
]}

机构：

[1] Asia Pacific Univ, Sch Engn, Kuala Lumpur, Malaysia

[2] Dankook Univ, Sch Elect & Elect Engn, Yongin, South Korea

[3] Ajou Univ, Dept Elect & Comp Engn, Suwon, South Korea

[4] Univ Arkansas, Elect Engn, Fayetteville, AR 72701 USA

来源：

JOURNAL OF POWER ELECTRONICS | 2022年 / 22卷 / 08期

关键词：

Wide bandgap; Silicon carbide; Gallium nitride; Cascode; SOLID-STATE TRANSFORMER; HIGH-EFFICIENCY; SIC MOSFETS; CROSSTALK SUPPRESSION; RELIABILITY ASSESSMENT; NEGATIVE VOLTAGE; HYBRID; INVERTER; MODULES; CELL;

D O I：

10.1007/s43236-022-00470-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reviewed the state-of-the-art wide band-gap (WBG) technology from material level to system level. The properties of semiconductor materials, i.e., silicon carbide and gallium nitride, were investigated. The electrical characteristics of commercial power devices, which include static and dynamic performances, were assessed, and compared. The design requirements of WBG gate drivers were then underpinned, and various gate driver topologies were reviewed. Finally, their implementation in power electronic converters and performances were evaluated.

引用

页码：1398 / 1413

页数：16

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