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Hole transport in the organic small molecule material α-NPD: evidence for the presence of correlated disorder
被引:79
作者:
van Mensfoort, S. L. M.
[1
,2
]
Shabro, V.
[2
]
de Vries, R. J.
[1
,2
]
Janssen, R. A. J.
[1
]
Coehoorn, R.
[1
,2
]
机构:
[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
[2] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands
关键词:
amorphous semiconductors;
carrier density;
current density;
electron correlations;
electronic density of states;
Gaussian processes;
hole mobility;
molecular electronics;
organic light emitting diodes;
organic semiconductors;
Poole-Frenkel effect;
semiconductor device models;
semiconductor process modelling;
LIGHT-EMITTING DEVICES;
ENERGY-LEVEL ALIGNMENT;
CHARGE-TRANSPORT;
CARRIER TRANSPORT;
ELECTROLUMINESCENT DEVICES;
ELECTRONIC-STRUCTURES;
HIGH-EFFICIENCY;
DIODES;
MOBILITY;
POLYMER;
D O I:
10.1063/1.3407561
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
In this paper the hole mobility in the amorphous small molecule material N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (alpha-NPD), which is frequently used in organic light-emitting diodes, is studied. From an analysis of the temperature and layer thickness dependence of the steady-state current density in sandwich-type alpha-NPD-based hole-only devices, it is found that a conventional mobility model assuming a Poole-Frenkel type field dependence and neglecting the carrier density dependence is not appropriate. Consistent descriptions with equal quality are obtained within the framework of two forms of the Gaussian disorder model (GDM and CDM), within which the presence of energetic disorder is described by a Gaussian density of states and within which spatial correlations between the site energies are absent or are included, respectively. Both models contain a carrier density dependence of the mobility. Based on a comparison of the site densities as obtained from both models with the molecular density, we argue that the analysis provides evidence for the presence of correlated disorder. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3407561]
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