High-Density Power Conversion and Wide-Bandgap Semiconductor Power Electronics Switching Devices

被引：40
作者：
Shenai, Krishna [1 ,2 ]
机构：
[1] eShakti Corp, Naples, FL 34108 USA
[2] FGCU, Emergent Technol Inst, Ft Myers, FL 33965 USA
来源：
PROCEEDINGS OF THE IEEE | 2019年 / 107卷 / 12期
关键词：
Power electronics; Switching circuits; Switches; Power conversion; MOSFET; Semiconductor devices; Bandgap; Crystals; Cost; crystal defects; power converter; reliability; semiconductor power switch; silicon; starting material; wide-bandgap (WBG) semiconductor; P-N-JUNCTIONS; SILICON-CARBIDE; HIGH-VOLTAGE; FIGURE; MERIT; FREQUENCY; DESIGN; TECHNOLOGIES; PARAMETERS; EVOLUTION;
D O I：
10.1109/JPROC.2019.2948554
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Power electronics switching devices made on wide-bandgap (WBG) semiconductors are known to have the potential to make a transformative impact on 21st century energy economy. However, their market penetration has been slow primarily due to high cost and unknown application-level reliability. This article presents a comprehensive report on the history, current state of the art, and impending challenges in WBG power semiconductor technologies in order to break open this gridlock.
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收藏
页码：2308 / 2326
页数：19
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