Scintillation properties of Yb-doped Bi4Ge3O12 single crystals emitting near-infrared luminescence

被引：10
作者：
Okazaki, Kai [1 ]
Fukushima, Hiroyuki [1 ]
Nakauchi, Daisuke [1 ]
Kato, Takumi [1 ]
Kawaguchi, Noriaki [1 ]
Yanagida, Takayuki [1 ]
机构：
[1] Nara Inst Sci & Technol NAIST, Div Mat Sci, 8916-5 Takayama Cho Ikoma, Nara 6300192, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2022年 / 61卷 / 06期
基金：
日本学术振兴会;
关键词：
radiation detection; scintillation detector; scintillator; x-ray detection; TEMPERATURE; EMISSION; QUEST; IONS; BGO;
D O I：
10.35848/1347-4065/ac6c13
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Yb-doped Bi4Ge3O12 (BGO) single crystals with different dopant concentrations were synthesized by the floating zone method, and the photoluminescence (PL) and scintillation properties in visible to near-infrared (NIR) wavelength ranges were evaluated. In PL and scintillation, a broad emission band was observed at 400-600 nm, which was ascribed to the electronic transitions of Bi3+. Furthermore, NIR emission bands due to Yb3+ were observed at 1000 nm. To evaluate scintillation detector properties, the relationship between emission intensity in the NIR range and X-ray exposure dose rate was investigated. Among the present samples, 0.5 and 1% Yb-doped BGO showed good linearity in the dynamic range from 0.006 to 60 Gy h(-1).
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页数：6
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