Grain size effect on the semiconductor-metal phase transition characteristics of magnetron-sputtered VO2 thin films -: art. no. 051910

被引：315

作者：

Brassard, D ^{[1
]}

Fourmaux, S ^{[1
]}

Jean-Jacques, M ^{[1
]}

Kieffer, JC ^{[1
]}

El Khakani, MA ^{[1
]}

机构：

[1] INRS Energie Mat & Telecommun, Varennes, PQ J3X 1S2, Canada

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 05期

基金：

加拿大创新基金会; 加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1063/1.2001139

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single-phase vanadium dioxide (VO2) thin films have been grown on Si3N4/Si substrates by means of a well-controlled magnetron sputtering process. The deposited VO2 films were found to exhibit a semiconductor-to-metal transition (SMT) at similar to 69 degrees C with a resistivity change as high as 3.2 decades. A direct and clear-cut correlation is established between the SMT characteristics (both amplitude and abruptness of the transition) of the VO2 films and their crystallite size. (c) 2005 American Institute of Physics.

引用

页数：3

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