The mechanism of radiative recombination in light-emitting devices composed on InGaN quantum wells

被引：0

作者：

Kawakami, Y ^{[1
]}

Narukawa, Y

Sawada, K

Saijyo, S

Fujita, S

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 60601, Japan

[2] Nichia Chem Ind Ltd, Dept Res & Dev, Anan 774, Japan

来源：

ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS | 1998年 / 81卷 / 07期

关键词：

InGaN light-emitting device; time resolved; spectroscopy; light-emitting mechanism; localized exciton; quantum dot;

D O I：

10.1002/(SICI)1520-6432(199807)81:7<45::AID-ECJB6>3.0.CO;2-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By means of time-resolved emission spectroscopy, the emission dynamics of InGaN quantum well light-emitting devices is evaluated. The localization, radiation, and nonradiating recombination processes of the exciton are evaluated. It is found that there exist random potential fluctuations in the quantum well in samples with less than about 10% In in the InGaN activation layer. By means of these fluctuations, localization of the excitons can be attained. It is also found that the degree of localization increases as the In composition is increased, and that quantum dot-like regions are naturally formed in samples with an In content of more than about 20%. It is found that the capture of excitons by nonradiating recombination centers is suppressed and that a high-emission quantum efficiency is realized by such a pronounced localization. (C) 1998 Scripta Technica.

引用

页码：45 / 56

页数：12

共 50 条

[41] Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes
Meneghini, M.
la Grassa, M.
Vaccari, S.
Galler, B.
Zeisel, R.
Drechsel, P.
Hahn, B.
Meneghesso, G.
Zanoni, E.
APPLIED PHYSICS LETTERS, 2014, 104 (11)
[42] Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells
Li, T.
Fischer, A. M.
Wei, Q. Y.
Ponce, F. A.
Detchprohm, T.
Wetzel, C.
APPLIED PHYSICS LETTERS, 2010, 96 (03)
[43] Photocurrent spectroscopy evidence for stress-induced recombination centres in quantum wells of InGaN/GaN-based light-emitting diodes
Rigutti, L.
Castaldini, A.
Meneghini, M.
Cavallini, A.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (02)
[44] Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations
Jones, Christina M.
Teng, Chu-Hsiang
Yan, Qimin
Ku, Pei-Cheng
Kioupakis, Emmanouil
APPLIED PHYSICS LETTERS, 2017, 111 (11)
[45] Efficient blue light-emitting diodes with InGaN/GaN triangular shaped multiple quantum wells
Choi, RJ
Hahn, YB
Shim, HW
Han, MS
Suh, EK
Lee, HJ
APPLIED PHYSICS LETTERS, 2003, 82 (17) : 2764 - 2766
[46] Quantum dot light-emitting devices
Talapin, Dmitri V.
Steckel, Jonathan
MRS BULLETIN, 2013, 38 (09) : 685 - 695
[47] Cathodoluminescence Characteristics of Linearly-Shaped Staggered InGaN Quantum Wells Light-Emitting Diodes
Zhao, Hongping
Zhang, Jing
Toma, Takahiro
Liu, Guangyu
Poplawsky, Jonathan D.
Dierolf, Volkmar
Tansu, Nelson
2010 23RD ANNUAL MEETING OF THE IEEE PHOTONICS SOCIETY, 2010, : 532 - +
[48] Tunneling effects in light-emitting diodes based on InGaN/AlGaN/GaN heterostructures with quantum wells
Kudryashov, VE
Zolin, KG
Turkin, AN
Yunovich, AE
Kovalev, AN
Manyakhin, FI
SEMICONDUCTORS, 1997, 31 (11) : 1123 - 1127
[49] Cathodoluminescence Characteristics of Linearly-Shaped Staggered InGaN Quantum Wells Light-Emitting Diodes
Zhao, Hongping
Zhang, Jing
Liu, Guangyu
Toma, Takahiro
Poplawsky, Jonathan D.
Dierolf, Volkmar
Tansu, Nelson
GALLIUM NITRIDE MATERIALS AND DEVICES VI, 2011, 7939
[50] Investigation of InGaN/GaN Multiple Quantum Wells with Strain Relief Behavior for Light-Emitting Diodes
Chang, T. W.
Chung, T. J.
Ru, T.
Nee, T. E.
Lu, H. C.
Wu, G. M.
2009 4TH IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, VOLS 1 AND 2, 2009, : 485 - 488

← 1 2 3 4 5 →