Photoreflectance analysis of a GaInP/GaInAs/Ge multijunction solar cell

被引：21

作者：

Canovas, E. ^{[1
]}

Fuertes Marron, D. ^{[1
]}

Marti, A. ^{[1
]}

Luque, A. ^{[1
]}

Bett, A. W. ^{[2
]}

Dimroth, F. ^{[2
]}

Philipps, S. P. ^{[2
]}

机构：

[1] Univ Politecn Madrid, Inst Energia Solar, ETSI Telecomunicac, E-28040 Madrid, Spain

[2] Fraunhofer Inst Solar Energy Syst, D-79110 Freiburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 20期

关键词：

GAAS; ELECTROREFLECTANCE; SPECTROSCOPY;

D O I：

10.1063/1.3517255

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have analyzed the photoreflectance spectra of a GaInP/GaInAs/Ge triple junction solar cell. The spectra reveal signatures from the window layer and middle and top subcells included in the stack. Additional contributions from the multilayer buffer introduced between the mismatched bottom and middle cells have been detected. Franz-Keldysh oscillations (FKOs) dominate the spectra above the fundamental bandgaps of the GaInP and GaInAs absorbers. From the FKO analysis, we have estimated the dominant electric fields within each subcell. In light of these results, photoreflectance is proposed as a useful diagnostic tool for quality assessment of multijunction structures prior to completion of the device or at earlier stages during its processing. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3517255]

引用

页数：3

共 18 条

[1] SCHOTTKY-BARRIER ELECTROREFLECTANCE-APPLICATION TO GAAS [J].

ASPNNES, DE ;

STUDNA, AA .

PHYSICAL REVIEW B, 1973, 7 (10) :4605-4652

[2]

Bett AW, 2005, MATER RES SOC SYMP P, V836, P223

[3]

Cardona M., 1969, MODULATION SPECTROSC

[4]

Dimroth F., 2009, Proceedings of the 2009 34th IEEE Photovoltaic Specialists Conference (PVSC 2009), P001038, DOI 10.1109/PVSC.2009.5411199

[5] Procedures for evaluating multijunction concentrators [J].

Emery, K ;

Meusel, M ;

Beckert, R ;

Dimroth, F ;

Bett, A ;

Warta, W .

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000, 2000, :1126-1130

[6] Gas source MBE growth and doping characteristics of AlInP on GaAs [J].

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China .

Mater Sci Eng B, 2006, 1-3 (49-53)

[7] Current-matched triple-junction solar cell reaching 41.1% conversion efficiency under concentrated sunlight [J].

Guter, Wolfgang ;

Schoene, Jan ;

Philipps, Simon P. ;

Steiner, Marc ;

Siefer, Gerald ;

Wekkeli, Alexander ;

Welser, Elke ;

Oliva, Eduard ;

Bett, Andreas W. ;

Dimroth, Frank .

APPLIED PHYSICS LETTERS, 2009, 94 (22)

[8] 40% efficient metamorphic GaInP/GaInAs/Ge multijunction solar cells [J].

King, R. R. ;

Law, D. C. ;

Edmondson, K. M. ;

Fetzer, C. M. ;

Kinsey, G. S. ;

Yoon, H. ;

Sherif, R. A. ;

Karam, N. H. .

APPLIED PHYSICS LETTERS, 2007, 90 (18)

[9] Metamorphic GaInP/GaInAs/Ge solar cells [J].

King, RR ;

Haddad, M ;

Isshiki, T ;

Colter, P ;

Ermer, J ;

Yoon, H ;

Joslin, DE ;

Karam, NH .

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000, 2000, :982-985

[10] Internal voltages in GaInP/GaInAs/Ge multijunction solar cells determined by electroluminescence measurements [J].

Kirchartz, Thomas ;

Rau, Uwe ;

Hermle, Martin ;

Bett, Andreas W. ;

Helbig, Anke ;

Werner, Jurgen H. .

APPLIED PHYSICS LETTERS, 2008, 92 (12)

← 1 2 →