Laser printing of polythiophene for organic electronics

被引：13

作者：

Zergioti, I. ^{[1
]}

Makrygianni, M. ^{[1
]}

Dimitrakis, P. ^{[2
]}

Normand, P. ^{[2
]}

Chatzandroulis, S. ^{[2
]}

机构：

[1] Natl Tech Univ Athens, Dept Phys, Athens 15780, Greece

[2] Natl Ctr Sci Res Demokritos, Inst Microelect, Athens 15310, Greece

来源：

APPLIED SURFACE SCIENCE | 2011年 / 257卷 / 12期

关键词：

Laser-induced forward transfer; Organic semiconductor; Nanosecond; Devices; THIN-FILM TRANSISTORS; MOBILITY;

D O I：

10.1016/j.apsusc.2010.10.145

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report on the development of hybrid organic/inorganic thin-film transistors using regioregular poly-3-hexylthiophene (P3HT) semiconductor material deposited by means of the solid-phase Laser Induced Forward Transfer (LIFT) technique. P3HT pixels were LIFT-printed onto Au/Ti source and drain electrodes formed on silicon dioxide/p(+)-type Si substrate. Deposition of the P3HT pixels was investigated as a function of the laser fluence using donor substrates with and without a dynamic release layer. Device electrical characterization reveals efficient field-effect action of the bottom gate on the organic channel. The transfer I-DS-V-GS characteristics exhibit well-defined sub-threshold, linear and saturation regimes designating LIFT as a promising technique for hybrid organic/inorganic transistor technology. (C) 2010 Elsevier B. V. All rights reserved.

引用

页码：5148 / 5151

页数：4

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