Determination of the trap state density differences in hydrogenated amorphous silicon-germanium alloys

被引：0
|
作者：
Boshta, M
Bärner, K
Braunstein, R [1 ]
Alavi, B
Nelson, B
机构：
[1] Univ Calif Los Angeles, Dept Phys & Astron, Los Angeles, CA 90095 USA
[2] Univ Gottingen, Inst Phys 4, D-37077 Gottingen, Germany
[3] Natl Renewable Energy Lab, Golden, CO 80401 USA
来源：
JOURNAL OF MATERIALS RESEARCH | 2005年 / 20卷 / 01期
关键词：
D O I：
10.1557/JMR.2005.0014
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Time-resolved photo- and thermoelectric effects (TTE) were used to determine simultaneously trap levels and trap state density differences in amorphous (a-SiGe:H) samples. In particular, the trap state density differences are obtained from the decay of the ambipolar charge distribution (i.e., stage II of the TTE transients). This type of spectroscopy has been applied for the first time to a-SiGe:H samples, and indeed trap states that seem to relate to concentration fluctuations, that is, Si(Ge) and Ge(Si) clusters, are observed.
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页码：48 / 53
页数：6
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