High-performance memristor based on MoS2 for reliable biological synapse emulation

被引:17
作者
Chen, Jianbiao [1 ]
Xu, Jiangwen [1 ]
Chen, Jiangtao [1 ]
Gao, Liye [1 ]
Yang, Chunyan [1 ]
Guo, Tongtong [1 ]
Zhao, Yun [1 ]
Xiao, Yifeng [2 ]
Wang, Jian [1 ]
Li, Yan [1 ]
机构
[1] Northwest Normal Univ, Coll Phys & Elect Engn, Key Lab Atom & Mol Phys & Funct Mat Gansu Prov, Lanzhou 730070, Peoples R China
[2] Lanzhou Univ, Hosp 2, Dept Plast Surg, Lanzhou 730000, Peoples R China
基金
中国国家自然科学基金;
关键词
MoS2; Memristor; Synapse; Emulation; Synaptic behavior; 2-DIMENSIONAL MATERIALS; ELECTRONIC SYNAPSES; BEHAVIOR;
D O I
10.1016/j.mtcomm.2022.103957
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Inspired by the neural network of the human brain, neuromorphic emulation for memorizing and processing data using electronic devices has attracted widespread intention. The conductance of memristor device can be changed by the charge flowing through it, which is analogical to the variation of synaptic plasticity with the applied external stimulation. However, the high switch voltage and inferior stability of memristor limit the further application to the imitation of biological synapse. Here, a memristor based on large-area MoS2 with vertical structure Al/MoS2/Cu is constructed, which is deposited by magnetron sputtering system on aluminum foil. The memristor presents superior stability and robustness, and has a small set and reset voltages with narrow variation distribution. More importantly, by applying relevant pulse sequence, the essential synaptic behaviors are mimicked by using the memristor based on MoS2, including paired-pulse facilitation (PPF) and spiking-time -dependent plasticity (STDP), etc.
引用
收藏
页数:8
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