Growth and piezoelectric properties of large size Ca3Ta(Ga0.5Al0.5)3Si2O14 crystals with langasite structure

被引：9

作者：

Xiong, Kainan ^{[1
,2
,3
]}

Wang, Sheng ^{[1
,3
]}

Tu, Xiaoniu ^{[1
,3
]}

Zheng, Yanqing ^{[1
,3
]}

Karaki, Tomoaki ^{[2
]}

Shi, Erwei ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China

[2] Toyama Prefectural Univ, Fac Engn, Imizu, Toyama 9390398, Japan

[3] Chinese Acad Sci, Suzhou Res Inst, Shanghai Inst Ceram, Taicang 215400, Jiangsu, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2020年 / 535卷

关键词：

Crystal structure; X-ray diffraction; Czochralski method; Gallium compounds; Piezoelectric materials; SINGLE-CRYSTALS; TEMPERATURE PROPERTIES; MATERIAL CONSTANTS; GALLIUM PHOSPHATE; GDCA4O(BO3)(3); GAPO4;

D O I：

10.1016/j.jcrysgro.2020.125525

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

4 in. Ca3Ta(Ga0.5Al0.5)(3)Si2O14 (CTGAS) in which 50% of Ga replaced by Al in Ca3TaGa3Si2O14(CTGS) crystal has been successfully grown by Czochralski technique. The full width at half-maximum (FWHM) of the rocking curves of five regions of CTGAS are found to be from 17.6 '' to 18.2 ''. All the effective segregation coefficients K-eff of chemical compositions are very close to 1. At room temperature, the piezoelectric coefficients d(11) and d(14) of CTGAS are found to be 3.96 pC/N and - 2.21 pC/N, and the electromechanical coupling coefficients k(12) and k(26) are determined as 9.3% and 29.9%, respectively. In the range from 500 degrees C to 800 degrees C, the X-cut of as-grown crystal possesses high electric resistivity. And the transmittances of CTGAS crystal are over 80% from 700 nm to 2700 nm.

引用

页数：4

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