Tuning the linear and nonlinear optical properties in double and triple δ- doped GaAs semiconductor: Impact of electric and magnetic fields

We report the optical absorption coefficients of double and triple delta- doped layers inserted symmetrically and asymmetrically in GaAs quantum wells under the influence of electric and magnetic fields within the effective mass approximation. Double and triple delta- doped layers have the same total amount of impurities and facilitate reasonable comparisons. The peak position of the optical absorption coefficients (OACs) only exhibit a blue shift when we increase the magnitude of the electric field for the double delta- doped layers. However, in the case of the triple delta- doped layers, the peak positions of the OACs first red shift and then blue shift with increasing electric field. Another important result is that the forbidden red shift in the variation of the OACs becomes possible by applying a magnetic field when we apply an electric field to the double delta- doped layers). We hope that these new findings will be helpful for the fabrication of a new generation of optoelectronic devices.