Formation of graded band-gap in CdZnTe by YAG: Nd laser radiation

被引：13

作者：

Medvid, A.

Fedorenko, L.

Korbutjak, B.

Kryluk, S.

Yusupov, M.

Mychko, A.

机构：

[1] Riga Tech Univ, LV-1048 Riga, Latvia

[2] NAS Ukraine, Inst Semicond Phys, Kiev, Ukraine

来源：

RADIATION MEASUREMENTS | 2007年 / 42卷 / 4-5期

关键词：

Cd1-xZnxTe; laser; thermogradient effect; graded band-gap;

D O I：

10.1016/j.radmeas.2007.01.070

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

A mechanism of formation of graded band-gap based on thermogradient effect (TGE) is proposed in Cd1-xZnx Te at irradiation by second harmonic of a Q-switched YAG:Nd laser. According to the effect, the interstitial atoms of Cd (Cd-i) in Cd1-xZnx Te move along the temperature gradient while the Cd vacancies (V-Cd) and Zn atoms-in the opposite direction, into the bulk of the semiconductor where temperature is lower. Photoluminescence (PL) spectra studied at 5 K show that concentration of Zn atoms increases due to aggregation of V-Cd with Zn after laser irradiation. Formation of a graded band-gap in Cd1-xZnx Te crystal at irradiation by second harmonica of YAG:Nd laser is shown to be possible. (C) 2007 Elsevier Ltd. All rights reserved.

引用

页码：701 / 703

页数：3

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