Critical Assessment 23: Gallium nitride-based visible light-emitting diodes

被引：9

作者：

Oliver, R. A. ^{[1
]}

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, 27 Charles Babbage Rd, Cambridge CB3 0FS, England

来源：

MATERIALS SCIENCE AND TECHNOLOGY | 2016年 / 32卷 / 08期

关键词：

Light-emitting diodes; Gallium nitride; Indium gallium nitride; Green; Efficiency droop; Silicon substrates; CRACK-FREE GAN; QUANTUM-WELL; EFFICIENCY DROOP; DOPED GAN; RECOMBINATION; GROWTH; PHOTOLUMINESCENCE; SI(111); FIELD; LEDS;

D O I：

10.1080/02670836.2015.1116225

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Solid-state lighting based on light-emitting diodes (LEDs) is a technology with the potential to drastically reduce energy usage, made possible by the development of gallium nitride and its alloys. However, the nitride materials family exhibits high defect densities and, in the equilibrium wurtzite crystal phase, large piezo-electric and polarisation fields arising at polar interfaces. These unusual physical properties, coupled with a high degree of carrier localisation in devices emitting visible light, result in ongoing challenges in device development, such as efficiency 'droop' (the reduction in efficiency of nitride LEDs with increasing drive current density), the 'green gap' (the relatively low efficiency of green emitters in comparison to blue) and the challenge of driving down the cost of LED epitaxy.

引用

页码：737 / 745

页数：9

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