Resonant Raman scattering of a-SiNx:H

被引：8
作者：
Wang, Y [1 ]
Yue, RF
Han, HX
Liao, XB
Wang, YQ
Diao, HW
Kong, GL
机构：
[1] Tsing Hua Univ, Inst Microelect, Dept Engn Phys, Beijing 100084, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
[3] Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China
来源：
MATERIALS LETTERS | 2001年 / 47卷 / 1-2期
关键词：
a-Sin(x): H films; resonant Raman scattering; quantum confinement model;
D O I：
10.1016/S0167-577X(00)00211-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Micro-Raman measurements were carried out to investigate the microstructure of amorphous silicon-nitrogen alloy (a-SiNx:H) samples with different N contents prepared by plasma enhanced chemical vapor deposition (PECVD). Resonant Raman effect was discovered by using 647.1- and 514.5-nm excitation wavelengths. The frequency of TO mode downshifts with increasing photon energy without varying its width, while LO mode expands to a great extent. The frequency-dependent shift of TO band is explained by heterogeneous structure model and quantum confinement model, and the width expansion of LO mode may be related to the overlapping of LA and LO bands. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：50 / 54
页数：5
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