Advanced power SW with wireless bonding for voltage regulators

被引：11

作者：

Hashimoto, T. ^{[1
]}

Uno, T. ^{[2
]}

Satou, Y. ^{[2
]}

Shiraishi, M. ^{[1
]}

Kawashima, T. ^{[1
]}

Matsuura, N. ^{[2
]}

机构：

[1] Hitachi Ltd, Hitachi Res Lab, 7-1-1 Omika Cho, Hitachi, Ibaraki 3191292, Japan

[2] Renesas Technol Corp, Discrete & Stand IC Business Unit, Tokyo, Japan

来源：

PROCEEDINGS OF THE 19TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS | 2007年

关键词：

D O I：

10.1109/ISPSD.2007.4294948

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An advanced power system in package (SiP) for voltage regulators is presented; it offers the world's lowest power dissipation of 4.4 W at 1 MHz, with an output voltage of 1.3 V and an output current of 25 A. Its package resistance is 88% lower due to using Cu leads for the bonding, which reduces the spreading resistance of the MOSFET. The diode loss is 43% lower due to using a Schottky barrier diode incorporated into the low-side MOSFET. The thermal resistance is also 43% lower due to using a large topside Cu lead.

引用

页码：125 / +

页数：2

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